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NTTFS4941N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – Steady State (Note 4)
Junction ? to ? Ambient – (t ≤ 10 s) (Note 3)
Symbol
R q JC
R q JA
R q JA
R q JA
Value
4.9
57
148
28.3
Unit
° C/W
3. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
4. Surface ? mounted on FR4 board using the minimum recommended pad size (40 mm 2 , 1 oz. Cu).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
15
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.2
4.3
2.2
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
I D = 20 A
I D = 10 A
4.8
4.8
6.2
m W
V GS = 4.5 V
I D = 20 A
I D = 10 A
7.0
7.0
9.0
Forward Transconductance
g FS
V DS = 1.5 V, I D = 15 A
33
S
CHARGES AND CAPACITANCES
Input Capacitance
C iss
1619
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 15 V
573
18
Total Gate Charge
Q G(TOT)
10.1
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V, I D = 20 A
2.6
4.9
1.3
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 15 V, I D = 20 A
22.8
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(on)
11
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 W
21
19
3.0
5. Pulse Test: pulse width = 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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